Evolution in surface morphology of epitaxial graphene layers on SiC induced by controlled structural strain
Evolution in surface morphology of epitaxial graphene layers on SiC induced by controlled structural strain
The evolution in the surface morphology of epitaxial graphene films and 6H-SiC(0001) substrates is studied by electron channeling contrast imaging. Whereas film thickness is determined by growth temperature only, increasing growth times at constant temperature affects both internal stress and film morphology. Annealing times in excess of 8–10 min lead …