Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography
Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography
Superconducting boron-doped silicon films prepared by gas immersion laser doping (GILD) technique are analyzed by atom probe tomography. The resulting three-dimensional chemical composition reveals that boron atoms are incorporated into crystalline silicon in the atomic percent concentration range, well above their solubility limit, without creating clusters or precipitates at the …