154 μm photoluminescence from Er:O_x centers at extremely low concentration in silicon at 300 K
154 μm photoluminescence from Er:O_x centers at extremely low concentration in silicon at 300 K
The demand for single photon sources at $\lambda~=~1.54~\mu$m, which follows from the consistent development of quantum networks based on commercial optical fibers, makes Er:O$_x$ centers in Si still a viable resource thanks to the optical transition of $Er^{3+}~:~^4I_{13/2}~\rightarrow~^4I_{15/2}$. Yet, to date, the implementation of such system remains hindered by its …