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<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>L</mml:mi><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mn>0</mml:mn></mml:mrow></mml:msub><mml:mtext> </mml:mtext><mml:mi>Fe</mml:mi><mml:mtext>โ</mml:mtext><mml:mi>Pd</mml:mi></mml:mrow></mml:math> Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions
Nonvolatile magnetic random-access memory (MRAM) based on perpendicular magnetic tunnel junctions (PMTJs) has been proposed as a universal memory solution for computing, where high thermal stability and low energy consumption are key. Unfortunately, PMTJs using materials with interfacial perpendicular magnetic anisotropy (PMA) cannot provide the required stability and scalability. This โฆ