Observation of trap-assisted space charge limited conductivity in short channel MoS2 transistor
Observation of trap-assisted space charge limited conductivity in short channel MoS2 transistor
We present temperature dependent I–V measurements of short channel MoS2 field effect devices at high source-drain bias. We find that, although the I–V characteristics are ohmic at low bias, the conduction becomes space charge limited at high VDS, and existence of an exponential distribution of trap states was observed. The …