Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance
Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance
We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference …