Büttiker probes for dissipative phonon quantum transport in semiconductor nanostructures
Büttiker probes for dissipative phonon quantum transport in semiconductor nanostructures
Theoretical prediction of phonon transport in modern semiconductor nanodevices requires atomic resolution of device features and quantum transport models covering coherent and incoherent effects. The nonequilibrium Green's function method (NEGF) is known to serve this purpose very well, but is numerically very expensive. This work extends the very efficient B\"uttiker …