Crossover between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films
Crossover between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films
We report transport studies on the 5 nm thick Bi2Se3 topological insulator films which are grown via molecular beam epitaxy technique. The angle-resolved photoemission spectroscopy data show that the Fermi level of the system lies in the bulk conduction band above the Dirac point, suggesting important contribution of bulk states …