Optimization of nonhomogeneous indium-gallium-nitride Schottky-barrier thin-film solar cells
Optimization of nonhomogeneous indium-gallium-nitride Schottky-barrier thin-film solar cells
A two-dimensional model was developed to simulate the optoelectronic characteristics of indium-gallium-nitride (InĪ¾Ga1 ā Ī¾N), thin-film, Schottky-barrier solar cells. The solar cells comprise a window designed to reduce the reflection of incident light, Schottky-barrier and ohmic front electrodes, an n-doped InĪ¾Ga1 ā Ī¾N wafer, and a metallic periodically corrugated backreflector. ā¦