Design and realization of a facility for the characterization of Silicon Avalanche PhotoDiodes
Design and realization of a facility for the characterization of Silicon Avalanche PhotoDiodes
We present the design, construction, and performance of a facility for the characterization of Silicon Avalanche Photodiodes in the operating temperature range between −2°C and 25°C. The system can simultaneously measure up to 24 photo-detectors, in a completely automatic way, within one day of operations. The measured data for each …