Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance
Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance
We report GaN n++/p++ interband tunnel junctions with repeatable negative differential resistance and low resistance. Reverse and forward tunneling current densities were observed to increase as Si and Mg doping concentrations were increased. Hysteresis-free, bidirectional negative differential resistance was observed at room temperature from these junctions at a forward voltage …