Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors
Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors
2D transition metal dichalcogenides (TMDs) have attracted a lot of attention recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excellent gate control resulting from their atomically thin dimensions. However, most TMDs have bandgaps (Eg) and effective masses (m(*)) outside the optimum range needed for high performance. It is …