The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs
The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs
Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-implantation through the oxide. We find that, after rapid thermal annealing at 1000oC for 5 seconds, each implanted P ion contributes an additional 0.08 plus/minus 0.03 …