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GROWTH OF QUANTUM WELL FILMS OF TOPOLOGICAL INSULATOR <font>Bi</font><sub>2</sub><font>Se</font><sub>3</sub> ON INSULATING SUBSTRATE
Insulating substrates are crucial for electrical transport study and room temperature application of topological insulator films at thickness of only several nanometers. High quality quantum well films of Bi2Se3, a typical three-dimensional topological insulator, have been grown on \alpha-Al2O3 (sapphire) (0001) by molecular beam epitaxy. The films exhibit well-defined quantum …