Impedance of the single-electron transistor at radio-frequencies
Impedance of the single-electron transistor at radio-frequencies
We experimentally characterize the impedance of a single-electron transistor (SET) at an excitation frequency comparable to the electron tunnel rate. In contrast to usual radio-frequency-SET operations, the excitation signal is applied to the gate of the device. At zero sourceādrain bias, the SET displays both resistive (Sisyphus resistance) and reactive ā¦