Anisotropic low-temperature piezoresistance in (311)A GaAs two-dimensional holes
Anisotropic low-temperature piezoresistance in (311)A GaAs two-dimensional holes
The authors report low-temperature resistance measurements in a modulation-doped, (311)A GaAs two-dimensional hole system as a function of applied in-plane strain. The data reveal a strong but anisotropic piezoresistance whose magnitude depends on the density as well as the direction along which the resistance is measured. At a density of …