Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material
Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material
Quantum spin Hall (QSH) materials promise revolutionary device applications based on dissipationless propagation of spin currents. They are two-dimensional (2D) representatives of the family of topological insulators, which exhibit conduction channels at their edges inherently protected against scattering. Initially predicted for graphene, and eventually realized in HgTe quantum wells, in …