Transport gap in SmB <sub>6</sub> protected against disorder
Transport gap in SmB <sub>6</sub> protected against disorder
The inverted resistance method was used in this study to extend the bulk resistivity of [Formula: see text] to a regime where the surface conduction overwhelms the bulk. Remarkably, regardless of the large off-stoichiometric growth conditions (inducing disorder by samarium vacancies, boron interstitials, etc.), the bulk resistivity shows an intrinsic …