Photoluminescence line shapes for color centers in silicon carbide from density functional theory calculations
Photoluminescence line shapes for color centers in silicon carbide from density functional theory calculations
Silicon carbide with optically and magnetically active point defects offers unique opportunities for quantum technology applications. Since interaction with these defects commonly happens through optical excitation and de-excitation, a complete understanding of their light-matter interaction in general and optical signatures, in particular, is crucial. Here, we employ quantum mechanical density …