Impurity band conduction in Si-doped <b> <i>β</i> </b>-Ga2O3 films
Impurity band conduction in Si-doped <b> <i>β</i> </b>-Ga2O3 films
By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped β-Ga2O3 films grown using metal-organic vapor phase epitaxy. High-magnetic field (H) Hall effect measurements (–90 kOe ≤ H ≤ +90 kOe) showed non-linear Hall resistance for T &lt; 150 K, revealing two-band conduction. Further analyses …