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Surface-induced linear magnetoresistance in the antiferromagnetic topological insulator <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Mn</mml:mi><mml:msub><mml:mi>Bi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math>
Through a thorough magnetotransport study of antiferromagnetic topological insulator $\mathrm{Mn}{\mathrm{Bi}}_{2}{\mathrm{Te}}_{4}$ (MBT) thick films, a positive linear magnetoresistance (LMR) with a two-dimensional (2D) character is found in high perpendicular magnetic fields and at temperatures up to at least 260 K. The nonlinear Hall effect further reveals the existence of high-mobility surface …