Band Bending and Valence Band Quantization at Line Defects in MoS<sub>2</sub>
Band Bending and Valence Band Quantization at Line Defects in MoS<sub>2</sub>
The variation of the electronic structure normal to 1D defects in quasi-freestanding MoS2, grown by molecular beam epitaxy, is investigated through high resolution scanning tunneling spectroscopy at 5 K. Strong upward bending of valence and conduction bands toward the line defects is found for the 4|4E mirror twin boundary and …