Quantum Transport in 40-nm MOSFETs at Deep-Cryogenic Temperatures
Quantum Transport in 40-nm MOSFETs at Deep-Cryogenic Temperatures
In this letter, we characterize the electrical properties of commercial bulk 40-nm MOSFETs at room and deep cryogenic temperatures, with a focus on quantum information processing (QIP) applications. At 50 mK, the devices operate as classical FETs or quantum dot devices when either a high or low drain bias is …