Longitudinal spin relaxation model applied to point-defect qubit systems
Longitudinal spin relaxation model applied to point-defect qubit systems
Controllable, partially isolated few-level systems in semiconductors have recently gained multidisciplinary attention due to their widespread nanoscale sensing and quantum technology applications. Quantitative simulation of the dynamics and related applications of such systems is a challenging theoretical task that requires faithful description not only of the few-level systems but also …