Influence of Irradiation on Defect Spin Coherence in Silicon Carbide
Influence of Irradiation on Defect Spin Coherence in Silicon Carbide
Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum properties, such as long room-temperature spin coherence and the possibility of downscaling to single-photon source level, they have proven to be promising candidates for a multitude of quantum information applications. …