Grain-Boundary Resistance in Copper Interconnects: From an Atomistic Model to a Neural Network
Grain-Boundary Resistance in Copper Interconnects: From an Atomistic Model to a Neural Network
Orientation effects on the resistivity of copper grain boundaries are studied systematically with two different atomistic tight binding methods. A methodology is developed to model the resistivity of grain boundaries using the Embedded Atom Model, tight binding methods and non-equilibrum Green's functions (NEGF). The methodology is validated against first principles …