Putative hybridization gap in CaMn2Bi2 under applied pressure
Putative hybridization gap in CaMn2Bi2 under applied pressure
We report electrical transport measurements on ${\mathrm{CaMn}}_{2}{\mathrm{Bi}}_{2}$ single crystals under applied pressure. At ambient pressure and high temperatures, ${\mathrm{CaMn}}_{2}{\mathrm{Bi}}_{2}$ behaves as a single-band semimetal hosting N\'eel order at ${T}_{N}=150$ K. At low temperatures, multiband behavior emerges along with an activated behavior typical of degenerate semiconductors. The activation gap is estimated …