Lifting of spin blockade by charged impurities in Si-MOS double quantum dot devices
Lifting of spin blockade by charged impurities in Si-MOS double quantum dot devices
One obstacle that has slowed the development of electrically gated metal-oxide-semiconductor (MOS) singlet-triplet qubits is the frequent lack of observed spin blockade, even in samples with large singlet-triplet energy splittings. We present theoretical and experimental evidence that this problem in MOS double quantum dots can be caused by stray positive …