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Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport
An aluminum nitride (AlN) Schottky barrier diode (SBD) was fabricated on a nonpolar AlN crystal grown on tungsten substrate by physical vapor transport. The Ni/Au-AlN SBD features a low ideality factor n of 3.3 and an effective Schottky barrier height (SBH) of 1.05 eV at room temperature. The ideality factor …