Unified numerical approach to topological semiconductor-superconductor heterostructures
Unified numerical approach to topological semiconductor-superconductor heterostructures
We develop a unified numerical approach for modeling semiconductor-superconductor heterostructures. All the key physical ingredients of these systems---orbital effect of magnetic field, superconducting proximity effect, and electrostatic environment---are taken into account on equal footing in a realistic device geometry. As a model system, we consider indium arsenide (InAs) nanowires with …