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Sub-nanosecond switching in a cryogenic spin-torque spin-valve memory element with a dilute permalloy free layer
We present a study of pulsed current switching characteristics of spin-valve nanopillars with in-plane magnetized dilute permalloy and undiluted permalloy free layers in the ballistic regime at low temperatures. The dilute permalloy free layer device switches much faster: the characteristic switching time for a permalloy (Ni0.83Fe0.17) free layer device is …