Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening
Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening
In the standard MOSFET description of the drain current $I_{D}$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv dV_{GS}/d\log I_{D}$ has a fundamental lower limit as a function of temperature $T$ given by $SS(T) = \ln10~k_BT/e$. However, recent low-temperature studies of different advanced CMOS technologies have …