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Excited-state band mapping and momentum-resolved ultrafast population dynamics in In/Si(111) nanowires investigated with XUV-based time- and angle-resolved photoemission spectroscopy
We investigate the excited state electronic structure of the model phase transition system In/Si(111) using femtosecond time- and angle-resolved photoemission spectroscopy (trARPES) with an XUV laser source at 500 kHz . Excited state band mapping is used to characterize the normally unoccupied electronic structure above the Fermi level in both …