Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices
Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices
We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar to the environment of the spins. The measurements are conducted at low temperatures ($T\approx 100$~mK), as a function …