Single Rare-Earth Ions as Atomic-Scale Probes in Ultrascaled Transistors
Single Rare-Earth Ions as Atomic-Scale Probes in Ultrascaled Transistors
Continued scaling of semiconductor devices has driven information technology into vastly diverse applications. The performance of ultrascaled transistors is strongly influenced by local electric field and strain. As the size of these devices approaches fundamental limits, it is imperative to develop characterization techniques with nanometer resolution and three-dimensional (3D) mapping …