Electronic‐Reconstruction‐Enhanced Tunneling Conductance at Terrace Edges of Ultrathin Oxide Films
Electronic‐Reconstruction‐Enhanced Tunneling Conductance at Terrace Edges of Ultrathin Oxide Films
Abstract Quantum mechanical tunneling of electrons across ultrathin insulating oxide barriers has been studied extensively for decades due to its great potential in electronic‐device applications. In the few‐nanometers‐thick epitaxial oxide films, atomic‐scale structural imperfections, such as the ubiquitously existed one‐unit‐cell‐high terrace edges, can dramatically affect the tunneling probability and device …