Vertically Illuminated, Resonant Cavity Enhanced, Graphene–Silicon Schottky Photodetectors
Vertically Illuminated, Resonant Cavity Enhanced, Graphene–Silicon Schottky Photodetectors
We report vertically illuminated, resonant cavity enhanced, graphene–Si Schottky photodetectors (PDs) operating at 1550 nm. These exploit internal photoemission at the graphene–Si interface. To obtain spectral selectivity and enhance responsivity, the PDs are integrated with an optical cavity, resulting in multiple reflections at resonance, and enhanced absorption in graphene. We …