Probing low noise at the MOS interface with a spin-orbit qubit
Probing low noise at the MOS interface with a spin-orbit qubit
The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been …