Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide
Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide
Semiconductor defects allowing efficient interaction between spins and photons can serve as building blocks for scalable quantum networks. The silicon vacancy (${V}_{\text{Si}}$) in SiC possesses controllable, long-lived ground-state spins, for adjustable fluorescence properties. However, its broad distribution of emitted-photon energies at room temperature means ${V}_{\text{Si}}$'s feasibility needs to be checked …