Nonvolatile MoS2 field effect transistors directly gated by single crystalline epitaxial ferroelectric
Nonvolatile MoS2 field effect transistors directly gated by single crystalline epitaxial ferroelectric
We demonstrate non-volatile, n-type, back-gated, MoS2 transistors, placed directly on an epitaxial grown, single crystalline, PbZr0.2Ti0.8O3 (PZT) ferroelectric. The transistors show decent ON current (19 μA/μm), high on-off ratio (107), and a subthreshold swing of (SS ∼ 92 mV/dec) with a 100 nm thick PZT layer as the back gate …