Intrinsic Electron Mobility Exceeding 10<sup>3</sup> cm<sup>2</sup>/(V s) in Multilayer InSe FETs
Intrinsic Electron Mobility Exceeding 10<sup>3</sup> cm<sup>2</sup>/(V s) in Multilayer InSe FETs
Graphene-like two-dimensional (2D) materials, not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also, hold promises for device miniaturization down to atomic thickness. As one material belonging to this category, InSe is not only a promising candidate for optoelectronic devices but also …