High Current Density Electrical Breakdown of TiS<sub>3</sub> Nanoribbon‐Based Field‐Effect Transistors
High Current Density Electrical Breakdown of TiS<sub>3</sub> Nanoribbon‐Based Field‐Effect Transistors
The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, the high current density properties of the …