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Thickness-tuned transition of band topology in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>ZrT</mml:mi><mml:msub><mml:mi mathvariant="normal">e</mml:mi><mml:mn>5</mml:mn></mml:msub></mml:mrow></mml:math> nanosheets

Thickness-tuned transition of band topology in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>ZrT</mml:mi><mml:msub><mml:mi mathvariant="normal">e</mml:mi><mml:mn>5</mml:mn></mml:msub></mml:mrow></mml:math> nanosheets

We report thickness-tuned electrical transport in highly anisotropic three-dimensional Dirac semimetal $\mathrm{ZrT}{\mathrm{e}}_{5}$ nanosheets with thickness down to 10 nm. We find that the resistivity peak temperature ${T}^{*}$ can be significantly tuned by the nanosheet thickness. When the thickness is reduced from 160 to 40 nm, ${T}^{*}$ reduces systematically from 145 …