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Gate-Variable Mid-Infrared Optical Transitions in a (Bi<sub>1โ<i>x</i></sub>Sb<sub><i>x</i></sub>)<sub>2</sub>Te<sub>3</sub> Topological Insulator
We report mid-infrared spectroscopy measurements of an electrostatically gated topological insulator, in which we observe several percent modulation of transmittance and reflectance of (Bi1-xSbx)2Te3 films as gating shifts the Fermi level. Infrared transmittance measurements of gated (Bi1-xSbx)2Te3 films were enabled by use of an epitaxial lift-off method for large-area transfer โฆ