On the origins of near-surface stresses in silicon around Cu-filled and CNT-filled through silicon vias
On the origins of near-surface stresses in silicon around Cu-filled and CNT-filled through silicon vias
Micro-Raman spectroscopy was employed to study the near-surface stress distributions and origins in Si around through silicon vias (TSVs) at both room temperature and elevated temperatures for Cu-filled and carbon nanotube (CNT)-filled TSV samples. From observations, we proved that the stresses near TSVs are mainly from two sources: (1) pre-existing …