Asymptotic behavior of solutions to the bipolar hydrodynamic model of semiconductors in bounded domain
Asymptotic behavior of solutions to the bipolar hydrodynamic model of semiconductors in bounded domain
In this paper we present a physically relevanthydrodynamic model for a bipolar semiconductor device considering Ohmic conductor boundary conditions and a non-flat doping profile.For such an Euler-Poisson system, we prove, by means of a technical energy method, that the solutions are unique, exist globallyand asymptotically converge to the corresponding stationary …