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Pressure-Resistant Intermediate Valence in the Kondo Insulator<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>SmB</mml:mi></mml:mrow><mml:mrow><mml:mn>6</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>

Pressure-Resistant Intermediate Valence in the Kondo Insulator<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>SmB</mml:mi></mml:mrow><mml:mrow><mml:mn>6</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>

Resonant x-ray emission spectroscopy was used to determine the pressure dependence of the $f$-electron occupancy in the Kondo insulator ${\mathrm{SmB}}_{6}$. Applied pressure reduces the $f$ occupancy, but surprisingly, the material maintains a significant divalent character up to a pressure of at least 35 GPa. Thus, the closure of the resistive …