Termination-dependent surface properties in the giant-Rashba semiconductors<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mtext>BiTe</mml:mtext><mml:mi>X</mml:mi></mml:mrow></mml:math>(<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>X</mml:mi><mml:mo>=</mml:mo><mml:mtext>Cl</mml:mtext></mml:mrow></mml:math>, Br, I)
Termination-dependent surface properties in the giant-Rashba semiconductors<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mtext>BiTe</mml:mtext><mml:mi>X</mml:mi></mml:mrow></mml:math>(<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>X</mml:mi><mml:mo>=</mml:mo><mml:mtext>Cl</mml:mtext></mml:mrow></mml:math>, Br, I)
The noncentrosymmetric semiconductors $\mathrm{BiTe}X\phantom{\rule{4pt}{0ex}}(X=\text{Cl},\text{Br},\text{I})$ show large Rashba-type spin-orbit splittings in their electronic structure making them candidate materials for spin-based electronics. However, BiTeI(0001) single-crystal surfaces usually consist of stacking-fault-induced domains of Te and I terminations implying a spatially inhomogeneous electronic structure. Here we combine scanning tunneling microscopy, photoelectron spectroscopy (ARPES, XPS), …