Device-size atomistic models of amorphous silicon
Device-size atomistic models of amorphous silicon
The atomic structure of amorphous materials is believed to be well described by the continuous-random-network model. We present an algorithm for the generation of large, high-quality continuous random networks. The algorithm is a variation of the sillium approach introduced by Wooten, Winer, and Weaire [Phys. Rev. Lett. 54, 1392 (1985)]. …