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Magnetotransport in ferromagnetic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Mn</mml:mi><mml:mn>5</mml:mn></mml:msub><mml:msub><mml:mi>Ge</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>,</mml:mo><mml:msub><mml:mi>Mn</mml:mi><mml:mn>5</mml:mn></mml:msub><mml:msub><mml:mi>Ge</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">C</mml:mi><mml:mrow><mml:mn>0.8</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>, and<mml:math xmlns:mml="…
The electrical resistivity, anisotropic magnetoresistance (AMR), and anomalous Hall effect of ferromagnetic ${\mathrm{Mn}}_{5}{\mathrm{Ge}}_{3},{\mathrm{Mn}}_{5}{\mathrm{Ge}}_{3}{\mathrm{C}}_{0.8}$, and ${\mathrm{Mn}}_{5}{\mathrm{Si}}_{3}{\mathrm{C}}_{0.8}$ thin films has been investigated. The data show a behavior characteristic for a ferromagnetic metal, with a linear increase of the anomalous Hall coefficient with Curie temperature. While for ferromagnetic ${\mathrm{Mn}}_{5}{\mathrm{Si}}_{3}{\mathrm{C}}_{0.8}$ the normal Hall coefficient …